List of Contributors ........................................... xv
Preface ..................................................... xxiii
Part I Low-Dimensional Systems: Theory and Experiment
1. The Theory of Two-Dimensional Electronic Systems ........... 3
A.V. CHAPLIKAND M.V. ENTIN
1.1 Electron States and Conductivity in a Quantum Well With
a Nonideal Boundary ........................................ 3
1.2 Charged Impurities in a Quantum Well ....................... 5
1.3 Two-Dimensional Systems in a Strong Magnetic Field ......... 5
1.4 Photogalvanic Effect and Quantum Pumps ..................... 6
1.5 Theory of a Nonadiabatic Quantum Pump ..................... 11
1.6 Electron States in Graphene ............................... 13
1.7 Excitons in Graphene ...................................... 14
1.8 Electrons in Curved Low-Dimensional Systems ............... 14
1.9 Collective Effects in Low-Dimensional Systems (Plasma
Waves, Wigner Crystallization, Screening) ................. 17
1.10 Screening in Nanostructures ............................... 23
1.11 Quasi-One-Dimensional Systems ............................. 23
1.12 Double Quantum Well ....................................... 23
1.13 Multilayer Superlattice ................................... 24
1.14 Screening by Dipole Excitons .............................. 24
References ................................................ 25
2. Two-Dimensional Semimetal in HgTe-Based Quantum Wells ..... 29
Z.D. KVON, E.B. OLSHANETSKY, D.A. KOZLOV, N.N. MIKHAILOV
AND S.A. DVORETSKY
2.1 Introduction .............................................. 29
2.2 Quantum Wells Based on HgTe Technology and Structure ...... 30
2.3 Samples and Experimental Technique ........................ 31
2.4 The Semimetal State in Wide HgTe Quantum Wells With an
Inverted Band Structure: Their Discovery and Nature ....... 32
2.5 Scattering Processes in a Two-Dimensional Semimetal ....... 36
2.6 Quantum Hall Effect ....................................... 40
References ................................................ 47
3. Nonlinear Two-Dimensional Electron Conductivity at High
Filling Factors ........................................... 49
A.A. BYKOV AND S.A. VITKALOV
3.1 Introduction .............................................. 49
3.2 Nonlinear Properties of 2D Electron Corbino Disks ......... 50
References ................................................ 57
4 Silicon-Based Nanoheterostructures With Quantum Dots ...... 59
A.V. DVURECHENSKII AND A.I. YAKIMOV
4.1 Introduction .............................................. 59
4.2 Homogeneity and Density of the Arrays of QDs .............. 60
4.3 Electronic Structure of Ge/Si QDs ......................... 66
4.4 Hole Transport in Dense Arrays of QDs ..................... 77
4.5 Spin Phenomena in an Array of Ge/Si QDs ................... 80
4.6 Ge/Si QDs for Near- and Mid-Infrared Photodetection ....... 86
Acknowledgments ........................................... 94
References ................................................ 94
5. Electron Transport: From Nanostructures to
Nanoelectromechanical Systems ............................ 101
A.G. POGOSOV, M.V. BUDANTSEV, A.A. SHEVYRIN,
E.YU. ZHDANOV AND D.A. POKHABOV
5.1 Introduction ............................................. 101
5.2 Electron Transport in Antidot Lattices ................... 101
5.3 Electron Transport in "Star" and "Caterpillar"
Billiards ................................................ 106
5.4 Weak Localization in a Square Antidot Lattice ............ 109
5.5 Mesoscopic Conductance Fluctuations in Sinai Billiards ... 109
5.6 Hysteretic Magnetoresistance of a Two-Dimensional
Electron Gas in the Quantum Hall Effect Regime ........... 112
5.7 Ballistic Effects in a Suspended 2DEG .................... 113
5.8 Suspended 2DEG Structured With an Antidot Lattice ........ 115
5.9 Quantum Hall Effect in Suspended Hall Bars ............... 118
5.10 Suspended Quantum Point Contact .......................... 120
5.11 Suspended Single-Electron Transistor ..................... 122
5.12 Euler Buckling Instability of Suspended Nanostructures ... 124
5.13 Nonlinear Dynamics of Suspended Nanostructures ........... 125
Acknowledgments .......................................... 128
References ............................................... 128
6 Modeling of Quantum Transport and Single-Electron
Charging in GaAs/AlGaAs-Nanostructures ................... 131
O.A. TKACHENKO, V.A. TKACHENKO, Z.D. KVON, D.V. SHEGLOV
AND A.L. ASEEV
6.1 Introduction ............................................. 131
6.2 Quantum Point Contacts ................................... 132
6.3 Two-Terminal and Three-Terminal Quantum Dots ............. 134
6.4 Small Ring Interferometers ............................... 138
6.5 Graphene-Like Lattices of Quantum Antidots and Quantum
Dots ..................................................... 149
6.6 Conclusions .............................................. 152
Acknowledgments .......................................... 152
References ............................................... 153
7 Spectroscopy of Vibrational States in Low-Dimensional
Semiconductor Systems .................................... 157
A.G. MILEKHIN AND D.R.T. ZAHN
7.1 Phonons in Semiconductor Superlattices ................... 157
7.2 Plasmon-Phonon Modes in GaAs/AlAs Superlattices .......... 165
7.3 Phonons in QD Structures ................................. 166
7.4 Phonons in Nanostructures: From Array Toward a Single
Nanostructure ............................................ 178
Acknowledgments .......................................... 181
References ............................................... 181
Part II Surface, Interface, Epitaxy
8 Atomic Processes on the Silicon Surface .................. 189
A.V. LATYSHEV, L.I. FEDINA, S.S. KOSOLOBOV,
S.V. SITNIKOV, D.I. ROGILO, E.E. RODYAKINA,
D.A. NASIMOV, D.V. SHEGLOVAND A.L. ASEEV
8.1 Introduction ............................................. 189
8.2 Experimental Method ...................................... 190
8.3 Step Motion on Vicinal and Step-Free Si(lll) Surfaces
During Sublimation ....................................... 191
8.4 Instability of the Regular Step Train .................... 196
8.5 Step Motion During Si Growth ............................. 201
8.6 Step Motion During Oxygen Etching ........................ 208
8.7 Initial Stages of Heteroepitaxial Growth on the Si(lll)
Surface .................................................. 212
8.8 Step-Bunching Induced by Gold Adsorption on the Si(lll)
Surface .................................................. 213
8.9 Conclusion ............................................... 216
Acknowledgment ........................................... 216
References ............................................... 216
9 Atomic Structure of Semiconductor Low-Dimensional
Heterosystems ............................................ 223
A.X. GUTAKOVSKII, A.V. LATYSHEVAND A.L. ASEEV
9.1 Analytical HREM .......................................... 224
9.2 Automodulation of Chemical Composition in CdxHg1-xTe
Films .................................................... 229
9.3 Nanocrystal Visibility Limits in an Amorphous Matrix ..... 231
9.4 The Geometrical Phase Method for Quantitative Analysis
of Crystalline Lattice Deformations ...................... 232
9.5 Atomic Structures of Multicomponent Systems .............. 242
9.6 Iron Disilicide in a Silicon Matrix ...................... 247
Acknowledgments .......................................... 252
References ............................................... 252
10. Formation of GaAs Step-Terraced Surfaces by Annealing in
Equilibrium Conditions ................................... 255
V.L. ALPEROVICH, I.O. AKHUNDOV, DM. KAZANTSEV,
N.S. RUDAYA, E.E. RODYAKINA, A.S. KOZHUKHOV,
D.V. SHEGLOV, A.N. KARPOV, N.L. SHWARTZ,
A.S. TEREKHOV AND, A.V. LATYSHEV
10.1 Introduction ............................................. 255
10.2 GaAs Surface Thermal Smoothing Technique ................. 257
10.3 Thermal Smoothing GaAs(001) Surface: Isochronal
Anneals at Various Temperatures .......................... 259
10.4 GaAs(001) Surface Smoothing Kinetics ..................... 263
10.5 MC Simulation of GaAs Step-Terraced Surface Formation .... 267
10.6 Step-Terraced GaAs(001) Surfaces With Straight
Monatomic Steps Induced by Dislocations .................. 272
10.7 Conclusions .............................................. 274
Acknowledgments .......................................... 275
References ............................................... 275
11. Atomic Processes in the Formation of Strained Ge Layers
on Si(111) and (001) Substrates Within the Stransky-
Krastanov Growth Mechanism ............................... 279
S.A. TEYS
11.1 Introduction ............................................. 279
11.2 Surface Preparation, Growth of Ge and STM Measurements ... 280
11.3 Formation Ge Wetting Layer on Si(111) .................... 280
11.4 The Transition from the Wetting Layer to Three-
Dimensional Growth of Ge on Si(111) ...................... 284
11.5 Formation of a Wetting Layer and Hut-clusters of Ge
on Si(001) ............................................... 287
11.6 Conclusion ............................................... 292
Acknowledgments .......................................... 293
References ............................................... 293
12. Molecular Beam Epitaxy of Cdxg1-xTe ....................... 297
YU.G. SIDOROV, A.P. ANCIFEROV, V.S. VARAVIN,
S.A. DVORETSKY, N.N. MIKHAILOV, M.V YAKUSHEV,
I.V. SABININA, V.G. REMESNIK, D.G. IKUSOV,
I.N. UZHAKOV, G.YU. SIDOROV, V.D. KUZMIN,
S.V. RIHLICKY, V.A. SHVETS, A.S. MARDEZOV,
E.V. SPESIVCEV, A.K. GUTAKOVSKII AND A.V. LATYSHEV
12.1 Advantages and Problems of MBE MCT ....................... 298
12.2 Defects Caused by the Use of Substrates From
Nonisovalent Compounds ................................... 299
12.3 Processes in the Adsorption Layer at MBE Cdx-Hg1-xTe
and CdTe ................................................. 301
12.4 MBE System for Growing Narrow-Gap Solid Solutions
Containing Mercury ....................................... 302
12.5 Growing Heteroepitaxial MCT Structures on a GaAs
Substrate ................................................ 305
12.6 The Homogeneity of the Composition and Electrical
Properties of Heteroepitaxial of MCT on a GaAs
Substrate ................................................ 318
12.7 Conclusion ............................................... 321
12.7 References ............................................... 321
13. Surface Morphologies Obtained by Ge Deposition on Bare
and Oxidized Silicon Surfaces at Different Temperatures .. 325
A.A. SHKLYAEV, K.N. ROMANYUK, S.S. KOSOLOBOV AND
A.V. LATYSHEV
13.1 Introduction ............................................. 325
13.2 Experimental Details ..................................... 326
13.3 Epitaxial Ge Growth on Bare and Oxidized Si(001)
Substrates in the Middle Temperature Range ............... 327
13.4 Surface Morphologies Obtained by Ge Deposition on
Si(001) at High Temperatures ............................. 330
13.5 Ge Epitaxial Growth on Si(lll) Substrates in the Middle
Temperature Range ........................................ 332
13.6 High-Temperature Structures of SiGe on Si(lll) ........... 334
13.7 Surface Morphologies After Deposition of Large Ge
Coverages ................................................ 337
Acknowledgments .......................................... 341
References ............................................... 341
14 Monte Carlo Simulation of Semiconductor Nanostructure
Growth ................................................... 345
I.G. NEIZVESTNY AND N.L. SHWARTZ
14.1 Introduction ............................................. 345
14.2 Silicon Nanoclusters in Silicon Dioxide .................. 346
14.3 Nanowhisker Growth ....................................... 350
14.4 Si Nanowhiskers .......................................... 351
14.5 Au-Catalyzed and Self-Catalyzed GaAs Nanowhisker Growth .. 356
References ............................................... 361
Part III. Radiation Effects on Semiconductor Structures
15. The Energy Pulse-Oriented Crystallization Phenomenon
in Solids (Laser Annealing) ............................. 367
A.V. DVURECHENSKII
15.1 Introduction ............................................. 367
15.2 Heating and Cooling During Laser Annealing ............... 369
15.3 Solid-Phase Crystallization .............................. 371
15.4 Melting and Liquid-Phase Crystallization ................. 371
15.5 Self-Sustained (Explosive) Crystallization ............... 374
15.6 Dopant Element Solubility and Spatial Distribution ....... 375
15.7 Melting of Nanocrystals Embedded in a Crystal Matrix ..... 376
15.8 Conclusions .............................................. 379
References ............................................... 380
16. Universality of the {113} Habit Plane in Si for Mixed
Aggregation of Vacancies and Self-Interstitial Atoms
Provided by Topological Bond Defect Formation ............ 383
L.I. FEDINA, A.K. GUTAKOVSKII, A.V. LATYSHEV AND
A.L ASEEV
16.1 Introduction ............................................. 383
16.2 Basic Results of Point Defect Aggregation in Silicon
Obtained by In Situ HVEM ................................. 385
16.3 Ordering of Close Correlated I-V Pairs in Si in {113}
Planes ................................................... 387
16.4 Vs and Is Aggregation in the {113} Plane in Si Foils
Covered With Si3N4 Films ................................. 394
16.5 V2-2I Cluster Aggregation in the {113} Plane in Si
Under Hot Implantation of Erbium Ions .................... 398
16.6 Conclusions .............................................. 404
Acknowledgment ........................................... 404
References ............................................... 404
17. Silicon-on-lnsulator Structures Produced by Ion-Beam
Synthesis and Hydrogen Transfer .......................... 409
I.E. TYSCHENKO AND V.P. POPOV
17.1 Introduction ............................................. 409
17.2 Ion-Beam Synthesis of SOI Structures ..................... 409
17.3 Wafer Bonding and Hydrogen Transfer ...................... 415
17.4 Nanometer-Thick SOI Structures ........................... 420
17.5 SOI Structures With the Nitrogenated Buried SiO2 Layer ... 422
17.6 SOI Structures With a Ge Layer Embedded on the Si/SiO2
Interface ................................................ 426
17.7 Conclusion ............................................... 431
References ............................................... 432
Part IV Electronic Advanced Materials
18. Superminiature Radiation Sources Based on Semiconductor
Nanostructures ........................................... 437
V.A. HAISLER, A.V. HAISLER, I.A. DEREBEZOV,
A.S. YAROSHEVICH, A.K. BAKAROV, D.V. DMITRIEV,
A.K. KALAGIN, A.I. TOROPOV, M.M. KACHANOVA,
YU.A. ZHIVODKOV, T.A. GAVRILOVA, A.S. MEDVEDEV,
L.A. NENASHEVA, O.I. SEMENOVA, K.V. GRACHEV,
V.K. SANDYREV, A.S. KOZHUKHOV, D.V. SHEGLOV,
D.B. TRETYAKOV, I.I. BETEROV, V.M. ENTIN,
I.I. RYABTSEV, A.V. LATYSHEV AND A.L ASEEV
18.1 Vertical Cavity Surface-Emitting Lasers .................. 438
18.2 Single-Photon Emitters ................................... 445
18.3 Emitters of Entangled Photon Pairs ....................... 452
18.4 Conclusion ............................................... 459
Acknowledgment ........................................... 459
References ............................................... 460
19. Three-Dimensional Systems and Nanostructures:
Technology, Physics and Applications ..................... 463
V.YA. PRINZ
19.1 The Technology of 3D Nanostructures ...................... 463
19.2 Nanoimprint Lithography .................................. 467
19.3 Electromagnetic Nanomaterials ............................ 470
19.4 Polymer Nanomaterials .................................... 475
19.5 Sensors and Actuators .................................... 477
19.6 Growth and Functionalization of Graphene Structures ...... 480
19.7 Quantum Properties of 3D Semiconductor Nanostructures .... 485
Acknowledgments .......................................... 489
References ............................................... 490
20. The Nature of Defects Responsible for Transport in a
Hafnia-Based Resistive Random Access Memory Element ...... 493
D.R. ISLAMOV, T.V PEREVALOV, V.A. GRITSENKO,
V.SH. ALIEV, A.A. SARAEV, V.V. KAICHEV, E.V. IVANOVA,
M.V ZAMORYANSKAYA AND A. CHIN
20.1 ReRAM: the Next Generation of Non-Volatile Memory ........ 493
20.2 ReRAM Element Fabrication and Characterization ........... 494
20.3 Transport Properties in High Resistance State ............ 495
20.4 Electronic Structure of Defects in the Active Layers
of ReRAM Element ......................................... 497
20.5 Transport Properties in Low Resistance State ............. 499
20.6 Conclusion ............................................... 502
Acknowledgment ........................................... 502
References ............................................... 502
21. The Optical Multiplexor Based on Multiple Coupled
Waveguides in Silicon-on-lnsulator Structures ............ 505
A.V. TSAREV
21.1 Multisplitting Filter-Multiplexer ........................ 507
21.2 Conclusions .............................................. 516
Acknowledgments .......................................... 517
References ............................................... 517
Index ......................................................... 521
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