Emerging memory technologies: design, architecture, and applications (New York, 2014). - ОГЛАВЛЕНИЕ / CONTENTS
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ОбложкаEmerging memory technologies: design, architecture, and applications / ed.: Y.Xie. - New York: Springer Science+Business Media, 2014. - vi, 322 p.: ill., tab. - Incl. bibl. ref. - ISBN 978-1-4419-9550-6.
Шифр: (И/З.973.2-E50) 02

 

Место хранения: 02 | Отделение ГПНТБ СО РАН | Новосибирск

Оглавление / Contents
 
1  Introduction ................................................. 1
   Yuan Xie
2  NVSim: A Circuit-Level Performance, Energy, and Area
   Model for Emerging Non-volatile Memory ...................... 15
   Xiangyu Dong, Cong Xu, Norm Jouppi and Yuan Xie
3  A Hybrid Solid-State Storage Architecture for the
   Performance, Energy Consumption, and Lifetime Improvement ... 51
   Guangyu Sun, Yongsoo Joo, Yibo Chen, Yiran Chen and Yuan
   Xie
4  Energy Efficient Systems Using Resistive Memory Devices ..... 79
   Meng-Fan Chang and Pi-Feng Chiu
5  Asymmetry in STT-RAM Cell Operations ....................... 117
   Yaojun Zhang, Wujie Wen and Yiran Chen
6  An Energy-Efficient 3D Stacked STT-RAM Cache Architecture
   for CMPs ................................................... 145
   Guangyu Sun, Xiangyu Dong, Yiran Chen and Yuan Xie
7  STT-RAM Cache Hierarchy Design and Exploration
   with Emerging Magnetic Devices ............................. 169
   Hai (Helen) Li, Zhenyu Sun, Xiuyuan Bi, Weng-Fai Wong,
   Xiaochun Zhu and Wenqing Wu
8  Resistive Memories in Associative Computing ................ 201
   Engin Ipek, Qing Guo, Xiaochen Guo and Yuxin Bai
9  Wear-Leveling Techniques for Nonvolatile Memories .......... 231
   Jue Wang, Xiangyu Dong, Yuan Xie and Norman P. Jouppi
10 A Circuit-Architecture Co-optimization Framework for
   Exploring Nonvolatile Memory Hierarchies ................... 261
   Xiangyu Dong, Norman P. Jouppi and Yuan Xie
11 Ferroelectric Nonvolatile Processor Design, Optimization,
   and Application ............................................ 289
   Yongpan Liu, Huazhong Yang, Yiqun Wang, Cong Wang, Xiao
   Sheng, Shuangchen Li, Darning Zhang and Yinan Sun


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