List of contributors ............................................ x
Preface ...................................................... xiii
1 Introduction ................................................. 1
Matthias Rudolph
1.1 Model extraction challenges ............................. 2
1.2 Model extraction workflow .............................. 15
References .................................................. 17
2 DC and thermal modeling: III—V FETs and HBTs ................ 18
Masaya Iwamoto, Jianjun Xu, and David E. Root
2.1 Introduction ........................................... 18
2.2 Basic DC characteristics ............................... 19
2.3 FET DC parameters and modeling ......................... 21
2.4 HBT DC parameters and modeling ......................... 25
2.5 Process control monitoring ............................. 27
2.6 Thermal modeling overview .............................. 28
2.7 Physics-based thermal scaling model for HBTs ........... 31
2.8 Measurement-based thermal model for FETs ............... 32
2.9 Transistor reliability evaluation ...................... 36
Acknowledgments ............................................. 40
References .................................................. 41
3 Extrinsic parameter and parasitic elements in III—V HBT
and HEMT modeling ........................................... 43
Sonja R. Nedeljkovic, William J. Clausen, Faramarz Kharabi,
John R.F. McMacken, and Joseph M. Gering
3.1 Introduction ........................................... 43
3.2 Test structures with calibration and de-embedding ...... 43
3.3 Methods for extrinsic parameter extraction used in
HBTs ................................................... 49
3.4 Methods for extrinsic parameter extraction used in
HEMTs .................................................. 60
3.5 Scaling for multicell arrays ........................... 72
References .................................................. 83
4 Uncertainties in small-signal equivalent circuit modeling ... 86
Christian Fager, Kristoffer Andersson, and Matthias
Ferndahl
4.1 Introduction ........................................... 86
4.2 Uncertainties in direct extraction methods ............. 88
4.3 Optimizer-based estimation techniques .................. 97
4.4 Complexity versus uncertainty in equivalent circuit
modeling .............................................. 116
4.5 Summary and discussion ................................ 120
References ................................................. 120
5 The large-signal model: theoretical foundations,
practical considerations, and recent trends ................ 123
David E. Root, Jianjun Xu, Jason Horn, and Masaya Iwamoto
5.1 Introduction .......................................... 123
5.2 The equivalent circuit ................................ 123
5.3 Nonlinear model constitutive relations ................ 127
5.4 Table-based models .................................... 130
5.5 Models based on artificial neural networks (ANNs) ..... 135
5.6 Extrapolation of measurement-based models ............. 137
5.7 Charge modeling ....................................... 139
5.8 Terminal charge conservation, delay, and transit
time for HBT models ................................... 153
5.9 FET modeling in terms of a drift charge concept ....... 156
5.10 Parameter extraction of compact models from large-
signal data ........................................... 158
5.11 Conclusions ........................................... 166
References ................................................. 166
6 Large and packaged transistors ............................. 171
Jens Engelmann, Franz-Josef Schmückle, and Matthias Rudolph
6.1 Introduction .......................................... 171
6.2 Thermal modeling ...................................... 175
6.3 EM simulation ......................................... 178
6.4 Equivalent-circuit package model ...................... 187
References ................................................. 204
7 Nonlinear characterization and modeling of dispersive
effects in high-frequency power transistors ................ 206
Olivier Jardel, Raphael Sommet, Jean-Pierre Teyssier, and
Raymond Quéré
7.1 Introduction .......................................... 206
7.2 Nonlinear electrothermal modeling ..................... 207
7.3 Trapping effects ...................................... 215
7.4 Characterization tools ................................ 243
7.5 Conclusions ........................................... 249
Acknowledgment ............................................. 250
References ................................................. 250
8 Optimizing microwave measurements for model construction
and validation ............................................. 257
Dominique Schreurs, Maciej Myslinski, and Giovanni Crupi
8.1 Introduction .......................................... 257
8.2 Microwave measurements and de-embedding ............... 258
8.3 Measurements for linear model construction ............ 264
8.4 Measurements for model validation ..................... 266
8.5 Measurements for nonlinear model construction ......... 274
References ................................................. 284
9 Practical statistical simulation for efficient circuit
design ..................................................... 287
Peter Zampardi, Yingying Yang, Juntao Hu, Bin Li, Mats
Fredriksson, Kai Kwok, and Hongxiao Shao
9.1 Introduction .......................................... 287
9.2 Approach, model development, design flow .............. 289
9.3 Examples of application to real circuits .............. 312
9.4 Summary ............................................... 314
Acknowledgments ............................................ 315
References ................................................. 316
10 Noise modeling ............................................. 318
Manfred Berroth
10.1 Fundamentals .......................................... 318
10.2 Noise sources ......................................... 325
10.3 Noise analysis in linear network theory ............... 331
10.4 Noise measurement setups .............................. 336
10.5 Transistor noise parameter extraction ................. 339
10.6 Summary ............................................... 348
References ................................................. 348
Index ......................................................... 350
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