Preface ......................................................... ix
Editor .......................................................... xi
Contributors .................................................. xiii
PART I Semiconductor Materials
Chapter 1 Electrical Propagation on Carbon Nanotubes:
From Electrodynamics to Circuit Models ................ 3
Antonio Maffucci, Andrea G. Chiariello, Carlo
Forestiere, and Giovanni Miano
Chapter 2 Monolithic Integration of Carbon Nanotubes and CMOS .. 29
Huikai Xie
Chapter 3 Facile, Scalable, and Ambient—Electrochemical Route
for Titania Memristor Fabrication .................... 67
Sumit Chaudhary and Nathan M. Neihart
Chapter 4 Spin Transport in Organic Semiconductors: A Brief
Overview of the First Eight Years .................... 87
Kazi M. Alam and Sandipan Pramanik
PART II Silicon Devices and Technology
Chapter 5 SiGe BiCMOS Technology and Devices .................. 137
Marco Racanelli and Edward Preisler
Chapter 6 Ultimate FDSOI Multigate MOSFETs and Multibarrier
Gate Resonant Tunneling FETs for a New High-
Performance Low-Power Paradigm ...................... 153
Aryan Afzalian
Chapter 7 Development of 3D Chip Integration Technology ....... 173
Katsuyuki Sakuma
Chapter 8 Embedded Spin-Transfer-Torque MRAM .................. 223
Kangho Lee
Chapter 9 Nonvolatile Memory Device: Resistive Random Access
Memory .............................................. 247
Peng Zhou, Lin Chen, Hangbing Lv, Haijun Wan, and
Qingqing Sun
Chapter 10 DRAM Technology ..................................... 277
Myoung Jin Lee
Chapter 11 Monocrystalline Silicon Solar Cell Optimization
and Modeling ........................................ 311
Joanne Huang and Victor Moroz
Chapter 12 Radiation Effects on Silicon Devices ................ 335
Marta Bagatin, Simone Gerardin, and Alessandro
Paccagnella
PART III Compound Semiconductor Devices and Technology
Chapter 13 GaN/InGaN Double Heterojunction Bipolar
Transistors Using Direct-Growth Technology .......... 361
Shyh-Chiang Shen, Jae-Hyun Ryou, and Russell Dean
Dupuis
Chapter 14 GaN HEMTs Technology and Applications ............... 377
Geok Ing Ng and Subramaniam Arulkumaran
Chapter 15 Surface Treatment, Fabrication, and Performances
of GaN-Based Metal-Oxide-Semiconductor High-
Electron Mobility Transistors ....................... 415
Ching-Ting Lee
Chapter 16 GaN-Based HEMTs on Large-Diameter Si Substrate for
Next Generation of High Power/High Temperature
Devices ............................................. 461
Farid Medjdoub
Chapter 17 GaAs HBT and Power Amplifier Design for Handset
Terminals ........................................... 485
Kazuya Yamamoto
Chapter 18 Resonant Tunneling and Negative Differential
Resistance in III-Nitrides .......................... 523
Vladimir Litvinov
Chapter 19 New Frontiers in Intersubband Optoelectronics
Using III-Nitride Semiconductors .................... 545
P. K. Kandaswamy and Eva Monroy
Index .......................................................... 569
|
