1 Introduction ................................................. 1
2 State-of-the-Art of Medium Voltage Semiconductors ............ 5
2.1 Function and Characteristic of IGCTs .................... 6
2.2 Structure, Function and Characteristic of IGBTs ......... 7
2.2.1 General Function of the IGBT ..................... 7
2.2.2 Characteristics of the IGBT ...................... 8
2.2.3 IGBT-Die Structures ............................. 16
2.3 Packaging of IGBTs and IGCTs ........................... 20
2.3.1 Power Modules ................................... 20
2.3.2 Press-pack ...................................... 22
2.4 IGBT and IGCT Medium Voltage Applications .............. 24
2.4.1 Market Overview of Medium Voltage
Semiconductors .................................. 24
2.4.2 Market Overview of Converters ................... 26
2.5 Summary ................................................ 28
3 Characterization of a New Medium Voltage Press-pack IGBT .... 29
3.1 Test Bench and Semiconductors Data ..................... 30
3.2 Static Characteristics ................................. 32
3.2.1 Forward Conduction Characteristic ............... 32
3.2.2 Blocking Characteristics ........................ 34
3.3 Switching Behavior ..................................... 35
3.3.1 Hard Switching .................................. 37
3.3.2 Clamp Operation ................................. 48
3.4 Comparison of press-pack IGBT at Hard Switching and
Clamp Operation ........................................ 57
3.4.1 Comparison of SOA Trajectories and Maximum
Instantaneous Power ............................. 57
3.4.2 Comparison of Switching Losses .................. 59
3.4.3 Conclusions ..................................... 60
3.5 Comparison press-pack IGBT vs IGCT ..................... 61
3.5.1 Conduction and Blocking Characteristic ......... 63
3.5.2 Switching Behavior .............................. 64
3.5.3 Conclusions ..................................... 72
3.6 Summary ................................................ 72
4 IGBT Parallel Connection .................................... 77
4.1 Fundamentals of Parallel Connection of IGBT ............ 77
4.1.1 Motivation: Parallel Connection to Increase
the Power ....................................... 77
4.1.2 Fundamentals .................................... 78
4.1.3 Goal of the Work ................................ 81
4.2 Simulative Investigation of Parallel Connection of
IGBT Modules ........................................... 81
4.2.1 IGBT and Diode Models for Investigation of
Switching Behavior .............................. 81
4.2.2 Simulative Study of Parameter Influence in
Collector-Current Imbalance ..................... 86
4.3 Experimental Verification of Delay Time Compensation
Principle .............................................. 93
4.3.1 Experimental Set-Up ............................. 93
4.3.2 Experimental Investigation ...................... 96
4.4 Requirements of Delay Time Compensation Principle ..... 102
4.5 Summary ............................................... 103
5 New Delay Time Compensation Utilizing the Bond Stray
Inductance of Parallel Connected IGBTs Modules ............. 105
5.1 State of the Art of Delay Time Compensation ........... 106
5.2 Principle of Delay Time Compensation Utilizing the
Bond Stray Inductance ................................. 108
5.2.1 Structure and Function ......................... 109
5.2.2 Implementation of Automated Delay Time
Compensation ................................... 111
5.2.3 Operation of Automated Delay Time
Compensation ................................... 118
5.3 Experimental verification of the Performance of the
New Delay Time Compensation Principle ................. 119
5.3.1 Tests for Pulse Operation ...................... 119
5.3.2 Tests of Sinusoidal Current Operation .......... 131
5.4 Evaluation of New Automated Delay Time Compensation ... 139
5.4.1 Operating Modes ................................ 140
5.4.2 Extension Possibilities of the New Automated
Delay Time Compensation ........................ 140
5.5 Summary ............................................... 141
6 Conclusions ................................................. 143
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