Tu K.-N. Electronic thin film reliability. - Cambridge; New York: Cambridge University Press, 2011. - xvi, 396 p.: ill. - Incl. bibl. ref. - Ind.: p.392-396. - ISBN 978-0-521-51613-6  Место хранения:   026 | Институт физики полупроводников СО РАН | Новосибирск | Библиотека

Оглавление / Contents

Preface .................................................... xv 1 Thin-film applications to microelectronic technology ......... 1 2 Thin-film deposition ........................................ 14 3 Surface energies ............................................ 30 4 Atomic diffusion in solids .................................. 60 5 Applications of the diffusion equation ...................... 86 6 Elastic stress and strain in thin films .................... 118 7 Surface kinetic processes on thin films .................... 141 8 Interdiffusion and reaction in thin films .................. 170 9 Grain-boundary diffusion ................................... 192 10 Irreversible processes in interconnect and packaging technology ................................................. 212 11 Electromigration in metals ................................. 237 12 Electromigration-induced failure in Al and Cu interconnects .............................................. 270 13 Thermomigration ............................................ 289 14 Stress migration in thin films ............................. 309 15 Reliability science and analysis ........................... 336 Appendix A: A brief review of thermodynamic functions ......... 363 Appendix B: Defect concentration in solids .................... 366 Appendix C: Derivation of Huntington's electron wind force .... 368 Appendix D: Elastic constants tables and conversions .......... 373 Appendix E: Terrace size distribution in Si MBE ............... 380 Appendix F: Interdiffusion coefficient ........................ 385 Appendix G: Tables of physical properties ..................... 388 Index ......................................................... 392