Measurement and modeling of silicon heterostructure devices / ed. by J.D.Cressler. - Boca Raton: CRC Press, 2008. - xiii, [200 p.]: ill. - Incl. bibl. ref. and index. - ISBN 1-4200-6692-7; ISBN-13 978-1-4200-6692-0  Место хранения:   026 | Институт физики полупроводников СО РАН | Новосибирск | Библиотека

Оглавление / Contents

1 The Big Picture ............................................ 1-1 John D. Cressler 2 A Brief History of the Field ............................... 2-1 John D. Cressler 3 Overview: Measurement and Modeling ......................... 3-1 John D. Cressler 4 Best-Practice AC Measurement Techniques .................... 4-1 Robert A. Groves 5 Industrial Application of TCAD for SiGe Development ........ 5-1 David C. Sheridan, Jeffrey B. Johnson, and Rajendran Krishnasamy 6 Compact Modeling of SiGe HBTs: HICUM ....................... 6-1 Michael Schröter 7 Compact Modeling of SiGe HBTs: Mextram ..................... 7-1 Slobodan Mijalković 8 CAD Tools and Design Kits .................................. 8-1 Sue E. Strang 9 Parasitic Modeling and Noise Mitigation Approaches in Silicon Germanium RF Designs ............................... 9-1 Raminderpal Singh 10 Transmission Lines on Si .................................. 10-1 Youri V. Tretiakov 11 Improved De-Embedding Techniques .......................... 11-1 Qingqing Liang A.1 Properties of Silicon and Germanium ..................... A.l-1 John D. Cressler A.2 The Generalized Moll-Ross Relations ..................... A.2-1 John D. Cressler A.3 Integral Charge-Control Relations ....................... A.3-1 Michael Schröter A.4 Sample SiGe HBT Compact Model Parameters ................ A.4-1 Ramana M. Malladi Index ......................................................... 1-1