1. Introduction
Michael R.Oliver .......................................... 1
1.1. Original Motivation for CMP ............................. 1
1.2. CMP Technology and Its Technical Understanding .......... 1
1.3. Applications of CMP to Semiconductor Processing ......... 2
1.4. Polishing Tools and Consumables of CMP Technology ....... 3
1.5. Post CMP Cleaning ....................................... 4
1.6. Integration of CMP Into the Semiconductor
Fabrication Process ..................................... 5
1.7. Pattern Dependency Issues ............................... 5
1.8. Other Issues ............................................ 6
References ...................................................... 6
2. CMP Technology
Michael R.Oliver .......................................... 7
2.1. Background and Motivation for CMP ....................... 7
2.2. Description of the CMP Process .......................... 8
2.3. Polishing Equipment ..................................... 8
2.4. Polish Process ......................................... 12
2.5. Planarization .......................................... 14
2.6. Polish Process Variables ............................... 19
2.7. Scales and Random Polishing Effects .................... 26
2.8. Random Effects ......................................... 30
2.9. Slurries with Particles Other than Silica .............. 31
2.10.Non-ILD Non-Metal CMP .................................. 33
2.11.Conclusion ............................................. 37
3. Metal Polishing Processes
D.R.Evans ................................................ 41
3.1. Metal Polishing Processes .............................. 41
3.2. Evolution of Damascene Surface Morphology During
Polishing .............................................. 46
3.3. Specifics of Tungsten and Copper Polishing ............. 51
3.4. Metal Polishing Chemistry .............................. 60
3.5. Acid-Base Equilibria ................................... 62
3.6. Buffering .............................................. 63
3.7. Oxidation-Reduction Reactions .......................... 66
3.8. Half Reactions ......................................... 67
3.9. Electrode Potentials ................................... 67
3.10.Complexation ........................................... 71
3.11.Surfactants and Inhibitors ............................. 74
3.12.The Future of Metal Polishing .......................... 79
References ..................................................... 80
4. Metal CMP Science
David Stein .............................................. 85
4.1. Introduction ........................................... 85
4.2. Tungsten Experimental Data - Chemical and
Electrochemical ........................................ 86
4.3. Tungsten Experimental Data - Role of Slurry
Particle ............................................... 97
4.4. Conclusions on Mechanisms on W CMP .................... 103
4.5. Copper Experimental Data - Chemical and
Electrochemical ....................................... 104
4.6. Copper Summary ........................................ 118
4.7. CMP Removal Models .................................... 119
4.8. Tungsten Model of Paul ................................ 120
4.9. Tungsten Model of Stein et al. ........................ 124
4.10.Copper Model of Babu et al. ........................... 127
4.11.Model Summary ......................................... 129
4.12.Future Trends ......................................... 130
References ................................................. 131
5. Equipment Used in CMP Processes
Thomas Tucker ........................................... 133
5.1. CMP Tool Requirements ................................. 133
5.2. Rotary CMP Tools ...................................... 138
5.3. Rotary Kinematics ..................................... 139
5.4. Carousel Systems ...................................... 142
5.5. Orbital Systems ....................................... 143
5.6. Linear Systems ........................................ 146
5.7. Modified Grinding Systems ............................. 148
5.8. Web Format Tools ...................................... 149
5.9. Electrochemical Mechanical Planarization .............. 151
5.10.Carrier Technology .................................... 151
5.11.Pad Conditioning ...................................... 155
5.12.Endpointing ........................................... 158
5.13.Summary ............................................... 163
References .................................................... 163
6. CMP Polishing Pads
David B.James ........................................... 167
6.1. Introduction .......................................... 167
6.2. Polymer Requirements for Polishing Pads ............... 167
6.3. Basics of Polyurethanes ............................... 170
6.4. Types of Commercially Available Polishing Pads
and Their Manufacture ................................. 172
6.5. Control of Polyurethane Pad Properties ................ 180
6.6. Control of Pad Properties Through Pad Geometry ........ 189
6.7. Relationships Between Pad Properties and
Polishing Performance ................................. 197
6.8. Slurryless Pad Technology ............................. 207
6.9. Future Trends in Polishing Pads ....................... 208
6.10.Acknowledgements ...................................... 210
References .................................................... 210
7. Fundamentals of CMP Slurry
Karl Robinson ........................................... 215
7.1. Introduction: Basic Components of CMP Slurries ........ 215
7.2. Surface Science and Electrochemistry in CMP Slurry .... 217
7.3. Slurry as a Suspension ................................ 222
7.4. Solids Content ........................................ 232
7.5. Slurry Handling ....................................... 241
7.6. Future Trends in Slurry ............................... 245
7.7. Summary ............................................... 246
References .................................................... 247
8. CMP Cleaning
John de Larios .......................................... 251
8.1. Introduction .......................................... 251
8.2. Polishing and the Control of CMP Defects .............. 259
8.3. Mechanical Brush Scrubbing for CMP Cleaning ........... 260
8.4. Non-Contact Processes for CMP Cleaning ................ 263
8.5. Other Cleaning Technologies ........................... 264
8.6. Cleaning of Oxides, W, STI, Cu, and low Materials ..... 265
8.7. Future Directions for CMP Cleaning .................... 276
8.8. Conclusion ............................................ 277
References .................................................... 277
9. Patterned Wafer Effects
D.Boning and D.Hetherington ............................. 283
9.1. Introduction .......................................... 283
9.2. Planarization Terminology and Characterization ........ 283
9.3. Pattern Dependencies in Dielectric CMP ................ 299
9.4. Metal CMP Pattern Dependencies ........................ 326
References .................................................... 344
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