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ОбложкаNonlinear transistor model parameter extraction techniques / ed. by M.Rudolph, Ch.Fager, D.E.Root. - Cambridge: Cambridge university press, 2012. - xiv, 352 p.: ill., tab. - (The Cambridge RF and microwve enginering series). - Bibliogr. at the end of the chapters. - Ind.: p.350-352. - ISBN 978-0-521-76210-6
Шифр: (И/З.85-N76) 02
 

Место хранения: 02 | Отделение ГПНТБ СО РАН | Новосибирск

Оглавление / Contents
 
List of contributors ............................................ x
Preface ...................................................... xiii

1  Introduction ................................................. 1
   Matthias Rudolph
   1.1  Model extraction challenges ............................. 2
   1.2  Model extraction workflow .............................. 15
   References .................................................. 17

2  DC and thermal modeling: III—V FETs and HBTs ................ 18
   Masaya Iwamoto, Jianjun Xu, and David E. Root
   2.1  Introduction ........................................... 18
   2.2  Basic DC characteristics ............................... 19
   2.3  FET DC parameters and modeling ......................... 21
   2.4  HBT DC parameters and modeling ......................... 25
   2.5  Process control monitoring ............................. 27
   2.6  Thermal modeling overview .............................. 28
   2.7  Physics-based thermal scaling model for HBTs ........... 31
   2.8  Measurement-based thermal model for FETs ............... 32
   2.9  Transistor reliability evaluation ...................... 36
   Acknowledgments ............................................. 40
   References .................................................. 41

3  Extrinsic parameter and parasitic elements in III—V HBT
   and HEMT modeling ........................................... 43
   Sonja R. Nedeljkovic, William J. Clausen, Faramarz Kharabi,
   John R.F. McMacken, and Joseph M. Gering
   3.1  Introduction ........................................... 43
   3.2  Test structures with calibration and de-embedding ...... 43
   3.3  Methods for extrinsic parameter extraction used in
        HBTs ................................................... 49
   3.4  Methods for extrinsic parameter extraction used in
        HEMTs .................................................. 60
   3.5  Scaling for multicell arrays ........................... 72
   References .................................................. 83

4  Uncertainties in small-signal equivalent circuit modeling ... 86
   Christian Fager, Kristoffer Andersson, and Matthias
   Ferndahl
   4.1  Introduction ........................................... 86
   4.2  Uncertainties in direct extraction methods ............. 88
   4.3  Optimizer-based estimation techniques .................. 97
   4.4  Complexity versus uncertainty in equivalent circuit
        modeling .............................................. 116
   4.5  Summary and discussion ................................ 120
   References ................................................. 120

5  The large-signal model: theoretical foundations,
   practical considerations, and recent trends ................ 123
   David E. Root, Jianjun Xu, Jason Horn, and Masaya Iwamoto
   5.1  Introduction .......................................... 123
   5.2  The equivalent circuit ................................ 123
   5.3  Nonlinear model constitutive relations ................ 127
   5.4  Table-based models .................................... 130
   5.5  Models based on artificial neural networks (ANNs) ..... 135
   5.6  Extrapolation of measurement-based models ............. 137
   5.7  Charge modeling ....................................... 139
   5.8  Terminal charge conservation, delay, and transit
        time for HBT models ................................... 153
   5.9  FET modeling in terms of a drift charge concept ....... 156
   5.10 Parameter extraction of compact models from large-
        signal data ........................................... 158
   5.11 Conclusions ........................................... 166
   References ................................................. 166

6  Large and packaged transistors ............................. 171
   Jens Engelmann, Franz-Josef Schmückle, and Matthias Rudolph
   6.1  Introduction .......................................... 171
   6.2  Thermal modeling ...................................... 175
   6.3  EM simulation ......................................... 178
   6.4  Equivalent-circuit package model ...................... 187
   References ................................................. 204

7  Nonlinear characterization and modeling of dispersive
   effects in high-frequency power transistors ................ 206
   Olivier Jardel, Raphael Sommet, Jean-Pierre Teyssier, and
   Raymond Quéré
   7.1  Introduction .......................................... 206
   7.2  Nonlinear electrothermal modeling ..................... 207
   7.3  Trapping effects ...................................... 215
   7.4  Characterization tools ................................ 243
   7.5  Conclusions ........................................... 249
   Acknowledgment ............................................. 250
   References ................................................. 250

8  Optimizing microwave measurements for model construction
   and validation ............................................. 257
   Dominique Schreurs, Maciej Myslinski, and Giovanni Crupi
   8.1  Introduction .......................................... 257
   8.2  Microwave measurements and de-embedding ............... 258
   8.3  Measurements for linear model construction ............ 264
   8.4  Measurements for model validation ..................... 266
   8.5  Measurements for nonlinear model construction ......... 274
   References ................................................. 284

9  Practical statistical simulation for efficient circuit
   design ..................................................... 287
   Peter Zampardi, Yingying Yang, Juntao Hu, Bin Li, Mats
   Fredriksson, Kai Kwok, and Hongxiao Shao
   9.1  Introduction .......................................... 287
   9.2  Approach, model development, design flow .............. 289
   9.3  Examples of application to real circuits .............. 312
   9.4  Summary ............................................... 314
   Acknowledgments ............................................ 315
   References ................................................. 316

10 Noise modeling ............................................. 318
   Manfred Berroth
   10.1 Fundamentals .......................................... 318
   10.2 Noise sources ......................................... 325
   10.3 Noise analysis in linear network theory ............... 331
   10.4 Noise measurement setups .............................. 336
   10.5 Transistor noise parameter extraction ................. 339
   10.6 Summary ............................................... 348
   References ................................................. 348

Index ......................................................... 350

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