Preface ......................................................... v
Sponsors ....................................................... vi
Committees .................................................... vii
I. Nano-Structure Physics and Nano-Material Science
High Mobility Ge-Based CMOS Device Technologies
S. Takagi, S. Dissanayake and M. Takenaka .................... 1
SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility
Ge-On-Insulator
T. Sadoh, K. Toko, M. Kurosawa, Т. Tanaka, T. Sakane,
Y. Ohta, N. Kawabata, H. Yokoyama and M. Miyao ............... 8
Impact of Self-Heating Effect on the Electrical
Characteristics of Nanoscale Devices
Y. Kamakura, T. Zushi, T. Watanabe, N. Mori and
K. Taniguchi ................................................ 14
Functional Device Applications of Nanosilicon
N. Koshida, T. Ohta, Y. Hirano, R. Mentek and B. Gelloz ..... 20
Tunable Single-Electron Turnstile Using Discrete Dopants in
Nanoscale SOI-FETs
D. Moraru, K. Yokoi, R. Nakamura, S. Miki, Т. Mizuno and
M. Tabe ..................................................... 27
KFM Observation of Electron Charging and Discharging in
Phosphorus-Doped SOI Channel
M. Anwar, D. Moraru, Y. Kawai, M. Ligowski, T. Mizuno,
R. Jabіoсski and M. Tabe .................................... 33
Photoluminescence Characteristics of Ultra-Thin Silicon-on-
Insulator at Low Temperatures
Y. Sakurai, S. Nomura, K. Shiraishi, K. Ohmori and
K. Yamada ................................................... 39
Investigation about I-V Characteristics in a New Electronic
Structure Model of the Ohmic Contact for Future Nano-Scale
Ohmic Contact
Y. Takada, M. Muraguchi, T. Endoh, S. Nomura and
K. Shiraishi ................................................ 43
Collective Electron Tunneling Model in Si-Nano Dot Floating
Gate MOS Structure
M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda,
K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi and
T. Endoh .................................................... 48
Electronic Structure and Spin-Injection of Co-Based Heusler
Alloy / Semiconductor Junctions
H. Itoh, S. Honda and J. Inoue .............................. 54
First-Principles Calculations of the Dielectric Constant for
the GeO2 Films
M. Tamura, J. Nakamura and A. Natori ........................ 60
Nanosize Electronics Material Analysis by Local Quantities
Based on the Rigged QED Theory
M. Senami, Y. Ikeda, Т. Hara and A. Tachibana ............... 66
Novel Source Heteroj unction Structures with Relaxed-
Strained-Layers for Quasi-Ballistic CMOS Transistors
T. Mizuno, M. Hasegawa and T. Sameshima ..................... 72
Effect of АЬОз Deposition and Subsequent Annealing on
Passivation of Defects in Ge-Rich SiGe-on-Insulator
H.G. Yang, M. Iyota, S. Ikeura, D. Wang and H. Nakashima .... 79
II. Nano-Processing and Nano-Devices
Controlled Synthesis of Carbon Nanowalls for Carbon Channel
Engineering
H. Kondo, M. Hori, W. Takeuchi and M. Hiramatsu ............. 85
Resistive Memory Utilizing Ferritin Protein with Nano
Particle
M. Uenuma, K. Kawano, B. Zheng, M. Horita, S. Yoshii,
I. Yamashita and Y. Uraoka .................................. 92
Atomically Controlled Plasma Processing for Group IV Quantum
Heterostructure Formation
M. Sakuraba, K. Sugawara and J. Murota ...................... 98
Nanometer-Scale Characterization Technique for Si
Nanoelectric Materials Using Synchrotron Radiation
Microdiffraction
S. Kimura, Y. Imai, O. Sakata and A. Sakai ................. 104
Generation and Growth of Atomic-Scale Roughness at Surface
and Interface of Silicon Dioxide Thermally Grown on
Atomically Flat Si Surface
Y. Hayashi, R. Hasunuma and K. Yamabe ...................... 110
Nano-Surface Modification of Silicon with Ultra-Short Pulse
Laser Process
Y. Setsuhara and M. Hashida ................................ 117
Evaluation of Strained Silicon by Electron Back Scattering
Pattern Compared with Raman Measurement and Edge Force Model
Calculation
M. Tomita, D. Kosemura, M. Takei, K. Nagata, H. Akamatsu
and A. Ogura ............................................... 123
Development of New Methods for Fine-Wiring in Si Using a Wet
Catalytic Reaction
C.L. Lee, T. Sugita, K. Tatsumi, S. Ikeda and
M. Matsumura ............................................... 129
III. Nano-System Functionality Integration
Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack
Hybrid Floating Gate in MOS Structures
N. Morisawa, M. Ikeda, K. Makihara and S. Miyazaki ......... 135
Energy Band Engineering of Metal Nanodots for High
Performance Nonvolatile Memory Application
Y.L. Pei, T. Hiraki, T. Kojima, T. Fukushima, M. Koyanagi
and T. Tanaka .............................................. 140
Strained Ge and Ge1-xSnx Technology for Future CMOS Devices
O. Nakatsuka, S. Takeuchi, Y. Shimura, A. Sakai and
S. Zaima ................................................... 146
Improved Electrical Properties and Thermal Stability of GeON
Gate Dielectrics Formed by Plasma Nitridation of Ultrathin
Oxides on Ge(100)
H. Watanabe, K. Kutsuki, I. Hideshima, G. Okamoto,
T. Hosoi and T. Shimura .................................... 152
Structural Change during the Formation of Directly Bonded
Silicon Substrates
T. Kato, Т. Ueda, Y. Ohara, J. Kikkawa, Y. Nakamura,
A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome,
Y. Imai, S. Kimura and O. Sakata ........................... 158
Microscopic Structure of Directly Bonded Silicon Substrates
T. Kato, Y. Ohara, T. Ueda, J. Kikkawa, Y. Nakamura,
A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda,
H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata
and S. Kimura .............................................. 164
Formation of Nanotubes of Carbon by Joule Heating of Carbon-
Contaminated Si Nanochains
H. Kohno and T. Nogami ..................................... 171
Si Nanodot Device Fabricated by Thermal Oxidation and their
Applications
Y. Takahashi, M.Y. Jo, T. Kaizawa, Y. Kato, M. Arita,
A. Fujiwara, Y. Ono, H. Inokawa and J.B. Choi .............. 175
Influences of Carrier Transport on Drain-Current Variability
of MOSFETs
K. Ohmori, K. Shiraishi and K. Yamada ...................... 184
Resistive Switching in NiO Bilayer Films with Different
Crystallinity Layers
K. Kita, A. Eika, T. Nishimura, K. Nagashio and
A. Toriumi ................................................. 188
IV. Nano-Device Integrity for Variability / Fluctuation
Management and Integration
Analysis of Threshold Voltage Variations in Fin Field Effect
Transistors
K. Tsutsui, Y. Kobayashi, K. Kakushima, P. Ahmet,
V.R. Rao and H. Iwai ....................................... 194
Capture/Emission Processes of Carriers in Heterointerface
Traps Observed in the Transient Charge-Pumping
Characteristics of SiGe/Si-Hetero-Channel pMOSFETs
T. Tsuchiya, K. Yoshida, M. Sakuraba and J. Murota ......... 201
Quasi-Ballistic Transport in Nano-Scale Devices: Boundary
Layer, Potential Fluctuation, and Coulomb Interaction
N. Sano and T. Karasawa .................................... 207
Effect of Back Bias on Variability in Intrinsic Channel SOI
MOSFETs
T. Hiramoto, T. Saraya and C.H. Lee ........................ 214
Discrete Dopant Effects on Threshold Voltage Variation in
Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor
Field-Effect-Transistors
N. Mori, Y. Kamakura, G. Mil'nikov and H. Minari ........... 218
Interconnect Design Challenges in Nano CMOS Circuit
K. Masu, S. Amakawa, H. Ito and N. Ishihara ................ 224
Keyword Index ................................................. 231
Author Index .................................................. 233
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